Thermal Annealing Effect in GaInNAs Thin Films Estimated by Fluorescence X-Ray Absorption Fine Structure Spectroscopy
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概要
- 論文の詳細を見る
The radiative efficiency of dilute nitride GaInNAs alloys is improved by thermal annealing. However, the band gap of these alloys is found to significantly blueshift. The structural changes of these alloys occur during thermal annealing. In this study, we studied the local atomic configuration around In atoms using fluorescence X-ray absorption fine structure spectroscopy. By comparing the radial distribution functions of as-grown and annealed GaInNAs thin films, it was found that the number of In atoms surrounding N atoms increases after thermal annealing.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Yamada Masako
Department Of Earth And Space Science Osaka University
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TAKIZAWA Toshiyuki
Matsushita Electric Ind., Co., Ltd.
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Uno Kazuyuki
Department Of Electronic Science And Engineering Kyoto University
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Tanaka Ichiro
Department Of Biology Faculty Of Science Nagoya University
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Tanaka Ichiro
Department of Systems Engineering, Wakayama University, Sakaedani 930, Wakayama, Wakayama 640-8510, Japan
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Takizawa Toshiyuki
Matsushita Electric Ind., Co., Ltd., Saiwaicho 1-1, Takatsuki, Osaka 569-1193, Japan
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Yamada Masako
Department of Systems Engineering, Wakayama University, Sakaedani 930, Wakayama, Wakayama 640-8510, Japan
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Uno Kazuyuki
Department of Systems Engineering, Wakayama University, Sakaedani 930, Wakayama, Wakayama 640-8510, Japan
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