Organic Memory Transistors Using Monolayer of Semiconductor Colloidal Nano-Dots as a Floating Gate

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概要

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• We fabricated pentacene-based memory field-effect transistors (FETs) in which a monolayer of semiconductor colloidal nano-dots (NDs) is embedded as a floating gate. After a sufficiently large writing voltage was applied on the control gate, the fabricated FETs showed a large positive threshold voltage (V_{\text{th}}) shift that was attributed to electrons trapped in embedded NDs. The V_{\text{th}} shift was measured as a function of the writing voltage, and it was shown that the minimum writing voltage for memory FETs with small NDs is significantly larger than that for FETs with large ones. This result supports the proposed model of the memory effect in which electrons that tunneled from nearby pentacene molecules are trapped in embedded NDs because the electron energy level in small NDs is higher than that in large ones.

• 2013-05-25

著者

• Uno Kazuyuki

  Department Of Electronic Science And Engineering Kyoto University

• MATSUI Daisuke

  Department of Electrical and Electronic Engineering Gifu University

• Kajimoto Kaori

  Department Of Materials Science And Chemistry Wakayama University

• Tanaka Ichiro

  Department Of Biology Faculty Of Science Nagoya University

• Tanaka Ichiro

  Department of Materials Science and Chemistry, Wakayama University, Wakayama 640-8510, Japan

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