Large Memory Effect and High Carrier Mobility of Organic Field-Effect Transistors Using Semiconductor Colloidal Nano-Dots Dispersed in Polymer Buffer Layers
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概要
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We fabricated organic memory field-effect transistors (FETs) using PbS colloidal nano-dots (NDs) dispersed in thin poly(methyl methacrylate) (PMMA) layers inserted between gate insulators (SiO2) and pentacene active layers as floating gates. The colloidal NDs were dispersed in chloroform solution with PMMA, and spin-coated on SiO2 surfaces. The fabricated memory FETs showed significantly large threshold voltage shifts of 64.5 V at maximum after a writing voltage of 100 V was applied to their control gates, and a maximum carrier mobility of 0.36 cm2 V-1 s-1, which was comparable to that of reference pentacene FETs without colloidal NDs, was obtained because of the improved crystallinity of the pentacene films.
- 2011-02-25
著者
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Uno Kazuyuki
Department Of Electronic Science And Engineering Kyoto University
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Kurokawa Atsushi
Department Of Material Science And Biotechnology Graduate School Of Science And Engineering Venture
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Kajimoto Kaori
Department Of Materials Science And Chemistry Wakayama University
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Tanaka Ichiro
Department Of Biology Faculty Of Science Nagoya University
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Kurokawa Atsushi
Department of Materials Science and Chemistry, Wakayama University, Wakayama 640-8510, Japan
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Tanaka Ichiro
Department of Materials Science and Chemistry, Wakayama University, Wakayama 640-8510, Japan
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Uno Kazuyuki
Department of Materials Science and Chemistry, Wakayama University, Wakayama 640-8510, Japan
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