Ab initio Molecular Orbital Study on Hydrogen Radical Addition Reactions to Graphite Surface and Subsequent Initial Surface Process in Silane Plasma Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Hydrogen plasma treatment of a highly oriented pyrolytic graphite (HOPG) surface induces a marked change in the growth of a-Si:H film by glow-discharged decomposition of SiH4. Scanning tunneling microscope (STM) observation verified that the inhomogeneous islandlike growth on as-cleaved HOPG became homogenous after the surface was treated with hydrogen plasma. This drastic change in the surface chemical process could be reasonably interpreted by the ab initio molecular orbital calculations performed on the following reaction models: (1) C24H12 + H $\rightarrow$ HC24H12 and (2) HC24H12 + SiH3 $\rightarrow$ HC24H12SiH3. A stable energy minimum was obtained for H addition. H addition to the HOPG surface causes radical formation on the neighboring sp2 carbons, which were in turn spontaneously attacked by SiH3 radicals in the plasma to initiate homogeneous a-Si:H film growth. Without hydrogen plasma treatment, SiH3 radicals would attack the highly conjugated sp2 carbon surface. Therefore, a-Si:H film growth is presumed to be initiated at sparsely distributed defect sites that induce island growth.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
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Koinuma Hideomi
Ceramic Materials And Structures Laboratory:crest Japan Science And Technology Corporation
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MIYAZAKI Kaori
Ceramic Materials and Structures Laboratory
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NAKAJIMA Kenji
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology
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Shinagawa Eiji
Department Of Materials Science Faculty Of Engineering Yokohama National University
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Sato Kota
Department Of Advanced Materials Chemistry Yokohama National University
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Miyazaki Kaori
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
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Shinagawa Eiji
Department of Materials Science, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Koinuma Hideomi
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
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