Sub-300 Å (Bax,Sr1-x)TiO3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties

スポンサーリンク

概要

• 論文の詳細を見る

• This is a preliminary report on the nanostructure and its evolution, step-coverage, and dielectric properties of sub-300 Å (Bax,Sr1-x)TiO3 films. The (001)-oriented polycrystalline films were deposited at 50–70 Å/min by metal-organic chemical vapor deposition (MOCVD) on (111) Pt-passivated Si substrates of 8-inch diameter. From the detailed nonstructural characterization of (Ba0.64,Sr0.36)TiO3 films, the orientation, cation stoichiometry, and an alternative but plausible mechanism of growth and the origin of roughness are forwarded. Additionally, the step-coverage in $2:1$ to $5:1$ aspect-ratio trenches, coupled with the frequency/voltage dependence of the dielectric properties of (Bax,Sr1-x)TiO3 films are reported. A 275 Å (Ba0.64,Sr0.36)TiO3 film exhibited a dispersionless dielectric permittivity and loss tangent of 260 and 0.003, respectively, and the permittivity ($\varepsilon_{\text{r}}=340$) of a 300 Å (Ba0.5,Sr0.5)TiO3 film reduced by 53% at a dc-bias of 3 V.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2001-05-15

著者

• DORNFEST Charles

  Applied Materials

• KHER Shreyas

  Applied Materials

• ZHAO Jun

  Applied Materials

• LOU Lee

  Applied Materials

• Dey Sandwip

  Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A

• Tang Derek

  Department Of Chemical And Materials Engineering And Center For Solid State Electronics Research Ari

• Kirby Aaron

  Department Of Chemical And Materials Engineering And Center For Solid State Electronics Research Ari

• Shin Yong-w.

  Department Of Chemical And Materials Engineering And Center For Solid State Electronics Research Ari

• Majhi Prashant

  Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A

• Majhi Prashant

  Department of Chemical and Materials Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006, USA

• Lou Lee

  Applied Materials, Santa Clara, CA 95054, USA

• Kher Shreyas

  Applied Materials, Santa Clara, CA 95054, USA

• Zhao Jun

  Applied Materials, Santa Clara, CA 95054, USA

• Dey Sandwip

  Department of Chemical and Materials Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006, USA

• Kirby Aaron

  Department of Chemical and Materials Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006, USA

• Shin Yong-W.

  Department of Chemical and Materials Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006, USA

• Dornfest Charles

  Applied Materials, Santa Clara, CA 95054, USA

関連論文

• Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
• Sub-300〓(Ba_x,Sr_)TiO_3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties
• Microstructural and Dielectric Properties of High Permittivity(Pb, Ba)ZrO_3 Thin Films by Sol-Gel Processing
• Preparation of Iridium Films by Liquid Source Metalorganic Chemical Vapor Deposition
• Electrical Properties of Paraelectric (Pb_La_) TiO_3 Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts
• Sub-300 Å (Bax,Sr1-x)TiO3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties

スポンサーリンク