Microstructural and Dielectric Properties of High Permittivity(Pb, Ba)ZrO_3 Thin Films by Sol-Gel Processing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-09-15
著者
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DEY Sandwip
Department of Chemical and Materials Engineering, and Center for Solid State Electronics Research, A
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MAJHI Prashant
Department of Chemical and Materials Engineering, and Center for Solid State Electronics Research, A
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Dey Sandwip
Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A
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BARZ Robert
Department of Chemical and Materials Engineering & Center for Solid State Electronics Research, Ariz
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WANG Chang-Gong
Department of Chemical and Materials Engineering & Center for Solid State Electronics Research, Ariz
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Barz Robert
Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A
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Wang Chang-gong
Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A
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Majhi P
Arizona State Univ. Az Usa
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Majhi Prashant
Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A
関連論文
- Sub-300〓(Ba_x,Sr_)TiO_3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties
- Microstructural and Dielectric Properties of High Permittivity(Pb, Ba)ZrO_3 Thin Films by Sol-Gel Processing
- Preparation of Iridium Films by Liquid Source Metalorganic Chemical Vapor Deposition
- Electrical Properties of Paraelectric (Pb_La_) TiO_3 Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts
- Sub-300 Å (Bax,Sr1-x)TiO3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties