Electrical Properties of Paraelectric (Pb_<0.72>La_<0.28>) TiO_3 Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Dey Sandwip
Department Of Chemical And Materials Engineering & Center For Solid State Electronics Research A
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Dey Sandwip
Advanced Ceramics Processing Laboratory Department Of Chemical Bio & Materials Engineering And C
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Lee J‐j
Electronics And Telecommunications Res. Inst. Taejon Kor
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LEE Jong-Jan
Advanced Ceramics Processing Laboratory, Department of Chemical, Bio & Materials Engineering and Cen
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ALLURI Prasad
Advanced Ceramics Processing Laboratory, Department of Chemical, Bio & Materials Engineering and Cen
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Alluri Prasad
Advanced Ceramics Processing Laboratory Department Of Chemical Bio & Materials Engineering And C
関連論文
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- Preparation of Iridium Films by Liquid Source Metalorganic Chemical Vapor Deposition
- Electrical Properties of Paraelectric (Pb_La_) TiO_3 Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts
- Sub-300 Å (Bax,Sr1-x)TiO3 Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties