Ion-Beam-Milling of InGaAsP Alloys with N2/O2-Mixtures

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概要

• 論文の詳細を見る

• In this paper ion-beam-milling of GaAs, InP as well as of InGaAs and InGaAsP of different compositions lattice-matched to InP was investigated using nitrogen and nitrogen/oxygen mixtures. The influence of process parameters such as gas composition, kinetic energy of the ions and the angle of incidence of the ions was investigated in detail. The etch rates of different masking materials like titanium, photoresist and SiO2 are also given. Special attention was paid to the geometry and roughness of the mesa facets in view of their use as laser facets. For the first time the experimental results are compared to calculations based on the sputter theory of Sigmund. The calculated dependence of the etch rates on the kinetic energy of the ions and on the angle of incidence up to 40° is in good agreement with the experimental results.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-04-15

著者

• Vollrath Gunther

  Deutsche Telekom Ag Technologiezentrum Darmstadt:(present Address) Deutsche Telekom Ag Technologieze

• Fiedler Friedrich

  Deutsche Telekom Ag Technologiezentrum Darmstadt

• Schlachetzki Andreas

  Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,

• Schlachetzki Andreas

  Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany

関連論文

• A Theoretical Model of InP Mass Transport
• Anisotropy and Lateral Homogeneity of InP-Mass Transport
• Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si
• Ion-Beam-Milling of InGaAsP Alloys with N_2/O_2-Mixtures
• Ion-Beam-Etched Laser Facets for InP-based Lasers
• Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits
• Antiphase-Domain-Free InP on (100) Si
• Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures
• Ion-Beam-Milling of InGaAsP Alloys with N2/O2-Mixtures

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