Antiphase-Domain-Free InP on (100) Si

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概要

• 論文の詳細を見る

• We show that antiphase-domain-free InP can be grown by means of low-pressure metalorganic-vapor-phase epitaxy (LP-MOVPE) on exactly (100)-oriented Si by appropriate choice of growth parameters. A simple detection scheme for antiphase domains (APD) in InP is presented. The most likely reason for the absence of APDs on the InP surface is their annihilation during the growth.

• 社団法人応用物理学会の論文
• 1992-08-01

著者

• Tang Guang-ping

  Institut Fur Halbleitertechnik Technische Universitat Braunschweig

• Schlachetzki Andreas

  Institut Fur Halbleitertechnik Technische Univesitat Braunschweig

• LUBNOW Andreas

  Institut fur Halbleitertechnik, Technische Universitat Braunschweig(Present address)KE Kommunikation

• WEHMANN Hergo-Heinrich

  Institut fur Halbleitertechnik, Technische Universitat Braunschweig

• ZWINGE Gregor

  Institut fur Halbleitertechnik Technische Universitat Braunschweig

• Lubnow Andreas

  Institut Fur Halbleitertechnik Technische Universitat Braunschweig(present Address)ke Kommunikations

• Wehmann Hergo-heinrich

  Institut Fur Halbleitertechnik Technische Universitat Braunschweig

• Schlachetzki Andreas

  Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,

関連論文

• A Theoretical Model of InP Mass Transport
• Anisotropy and Lateral Homogeneity of InP-Mass Transport
• Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si
• Ion-Beam-Milling of InGaAsP Alloys with N_2/O_2-Mixtures
• Ion-Beam-Etched Laser Facets for InP-based Lasers
• Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits
• Antiphase-Domain-Free InP on (100) Si
• Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures
• Ion-Beam-Milling of InGaAsP Alloys with N2/O2-Mixtures

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