A Theoretical Model of InP Mass Transport
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概要
- 論文の詳細を見る
A theoretical model of the mass transport observed after heat treatment of InP surfaces is proposed and experimentally verified. In this model the reduction of surface energy obtained by the refilling of concave surface regions at the expense of convex regions is proposed as the driving force for the mass transport. Given the experimental conditions of an InP crystal almost in equilibrium with its vapour in a closed system, the InP growth reaction was found to be the rate-limiting factor for the mass-transport process rather than the supply of phosphorus through the gas phase or indium via surface diffusion.
- 社団法人応用物理学会の論文
- 1993-01-15
著者
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Peiner Erwin
Institut Fur Halbleitertechnik Technische Universitat Braunschweig
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Hansen Karsten
Institut Fur Halbleitertechnik Technische Universitat Braunschweig
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Tang Guang-ping
Institut Fur Halbleitertechnik Technische Universitat Braunschweig
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Schlachetzki Andreas
Institut Fur Halbleitertechnik Technische Univesitat Braunschweig
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Hansen Karsten
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
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Peiner Erwin
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
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Schlachetzki Andreas
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
関連論文
- A Theoretical Model of InP Mass Transport
- Anisotropy and Lateral Homogeneity of InP-Mass Transport
- Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si
- Ion-Beam-Milling of InGaAsP Alloys with N_2/O_2-Mixtures
- Ion-Beam-Etched Laser Facets for InP-based Lasers
- Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits
- Antiphase-Domain-Free InP on (100) Si
- Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures
- Ion-Beam-Milling of InGaAsP Alloys with N2/O2-Mixtures