Anisotropy and Lateral Homogeneity of InP-Mass Transport
スポンサーリンク
概要
- 論文の詳細を見る
InP-mass transport performed in a conventional liquid-phase epitaxial (LPE) system using (111)B-InP protection wafers was investigated by scanning-electron microscopy and wavelength-selective transmission-infrared (IR) microscopy. Refilling of undercut-etched mesa stripes of a length of 2 mm was found to be laterally homogeneous within±6% when the process temperature was 721℃. In the <100> direction, an enhanced growth rate compared to that in the <110> direction was found. This anisotropy tended to disappear when the distance from the wafer to the protection wafer was reduced.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Peiner Erwin
Institut Fur Halbleitertechnik Technische Universitat Braunschweig
-
Hansen Karsten
Institut Fur Halbleitertechnik Technische Universitat Braunschweig
-
Schlachetzki Andreas
Institut Fur Halbleitertechnik Technische Univesitat Braunschweig
-
BURKHARD Herbert
Institut fur Halbleitertechnik, TU Braunschweig
-
Burkhard Herbert
Institut Fur Halbleitertechnik Tu Braunschweig
-
Hansen Karsten
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
-
Peiner Erwin
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
-
Schlachetzki Andreas
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
関連論文
- A Theoretical Model of InP Mass Transport
- Anisotropy and Lateral Homogeneity of InP-Mass Transport
- Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si
- Ion-Beam-Milling of InGaAsP Alloys with N_2/O_2-Mixtures
- Ion-Beam-Etched Laser Facets for InP-based Lasers
- Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits
- Antiphase-Domain-Free InP on (100) Si
- Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures
- Ion-Beam-Milling of InGaAsP Alloys with N2/O2-Mixtures