Ion-Beam-Milling of InGaAsP Alloys with N_2/O_2-Mixtures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-04-15
著者
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Schlachetzki Andreas
Institut Fur Halbleitertechnik Technische Univesitat Braunschweig
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Vollrath Gunther
Deutsche Telekom Ag Technologiezentrum Darmstadt:(present Address) Deutsche Telekom Ag Technologieze
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Fiedler Friedrich
Deutsche Telekom Ag Technologiezentrum Darmstadt
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Schlachetzki Andreas
Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
関連論文
- A Theoretical Model of InP Mass Transport
- Anisotropy and Lateral Homogeneity of InP-Mass Transport
- Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si
- Ion-Beam-Milling of InGaAsP Alloys with N_2/O_2-Mixtures
- Ion-Beam-Etched Laser Facets for InP-based Lasers
- Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits
- Antiphase-Domain-Free InP on (100) Si
- Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures
- Ion-Beam-Milling of InGaAsP Alloys with N2/O2-Mixtures