Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si

概要

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The residual stress in epitaxial InP on (001) Si was investigated by photoreflectance spectroscopy. Depending on doping concentration, low-field and intermediate-field spectra were measured which were quantitatively analysed by a third-derivative approximation or by a multilayer model, respectively. In both cases, transitions only from the heavy-hole and the split-off valence subbands into the conduction band contributed to the spectra, while the light-hole to conduction-band transition was absent. In addition to the energy shift due to tensile strain caused by the different thermal expansion coefficients of InP and Si, a signal component originating from compressive strain in the InP was observed. This effect is attributed to the clustering of dislocations at twin defects. As a result, a model of the defect distribution in the heteroepitaxial InP layers was presented.
社団法人応用物理学会の論文
1996-08-15