Ion-Beam-Etched Laser Facets for InP-based Lasers

概要

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In this paper laser facets are produced by ion beam etching (IBE) for the first time using mixtures of nitrogen and oxygen. The effects of different imperfections of etched facets on the optical reflectivity are investigated. Broad area lasers with both facets cleaved and lasers with one etched and one cleaved facet are fabricated emitting at a wavelength λ=1.55 μm. The reflectivity of the etched facet is extracted from threshold current measurements. With known reflectivity, the increase of threshold current can be calculated for different resonator dimensions. Although the geometrical requirements for good quality etched laser facets are fulfilled, the reflectivity is still somewhat lower than for cleaved facets. Nevertheless, the expected increase of threshold current for a typical laser structure is only 1.7 mA per facet. The increase is caused by the formation of an antireflection layer, formed by backsputtering.
社団法人応用物理学会の論文
1997-12-15