Reduction of the Threshold Voltages of Nematic Liquid Crystal Electrooptical Devices by Doping Inorganic Nanoparticles
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概要
- 論文の詳細を見る
We report the reduction of threshold voltage, $V_{\text{th}}$, of twisted nematic liquid crystal devices by doping the nanoparticles of MgO and SiO2. The results are well explained by inserting the experimentally determined values of elastic constants and dielectric anisotropy in the formula $V_{\text{th}} = \pi\sqrt{K_{\text{eff}}/\varepsilon_{0}\Delta\varepsilon}$, where both of these quantities decrease due to the existence of these nanoparticles. The $V_{\text{th}}$ decrease approximately as $\sqrt{S}$, where $S$ being the order parameter. The $S$ is also shown to decrease by doping nanoparticles.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-09-25
著者
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Kobayashi Shunsuke
Department Of Biology Faculty Of Science Yamagata University
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Takatoh Kohki
Department of Electrical and Electronic Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo Onoda, Yamaguchi 756-0884, Japan
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Inoue Kei-ichi
Liquid Crystal Institute and Graduate School of Science and Technology, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-Onoda, Yamaguchi 756-0884, Japan
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Haraguchi Fumiaki
Department of Electronic and Information Technology, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-Onoda, Yamaguchi 756-0884, Japan
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Toshima Naoki
Advanced Material Institute and Faculty of Science and Technology, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-Onoda, Yamaguchi 756-0884, Japan
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Kobayashi Shunsuke
Department of Electronic and Information Technology, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-Onoda, Yamaguchi 756-0884, Japan
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