Trivalued Memory Circuit Using Metal–Oxide–Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

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概要

• 論文の詳細を見る

• A trivalued memory circuit based on two cascoded metal–oxide–semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current–voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 μm SiGe process.

• Japan Society of Applied Physicsの論文
• 2006-09-25

著者

• Gan Kwang-jow

  Department Of Electrical Engineering National Chiayi University

• LIANG Dong-Shong

  Department of Electrical Engineering, National Cheng Kung University

• Tsai Cher-shiung

  Department Of Electronic Engineering Kun Shan University

• Gan Kwang-Jow

  Department of Electronic Engineering, Kun Shan University, 949 Da-Wan Road, Yung-Kang, Tainan Hsien 710, Taiwan, R.O.C.

• Wen Chun-Ming

  Department of Electronic Engineering, Kun Shan University, 949 Da-Wan Road, Yung-Kang, Tainan Hsien 710, Taiwan, R.O.C.

• Chen Yaw-Hwang

  Department of Electronic Engineering, Kun Shan University, 949 Da-Wan Road, Yung-Kang, Tainan Hsien 710, Taiwan, R.O.C.

関連論文

• Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
• Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
• Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
• Characterization of Extrinsic Hysteresis Phenomena of Series-Connected Identical Esaki-Diode-Like Negative Differential Resistance Devices
• Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources
• Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites
• Investigation of the Combined Current–Voltage Characteristics of Two Similar Esaki-Diode-Like Devices
• Trivalued Memory Circuit Using Metal–Oxide–Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
• Hysteresis Phenomena for the Series Circuit of Two Identical Negative Differential Resistance Devices

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