Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites
スポンサーリンク
概要
- 論文の詳細を見る
To improve the thermal conductance of epoxy used in the high-brightness light emitting diode (HB-LED) package, varied types of fillers were investigated. These fillers included non-functionalized multiwalled carbon nanotubes (MWCNTs), functionalized MWCNTs, micro-SiC particles and the composite of functionalized MWCNTs and micro-SiC particles. Forward voltages at test conditions, junction temperatures, luminous fluxes and operation current--forward voltage (I--V) relation of HB-LEDs were measured or determined for varied combination and contents of fillers in the epoxy. The experimental results showed the epoxy with the composite of 30 wt % of SiC and 5 wt % of MWCNTs had the best thermal properties. Comparing to commercial epoxy, under the operation of injection current of 350 mA, the MWCNT/SiC/epoxy could decrease junction temperature from 123 to 93 °C and thermal resistance from 81 to 65 °C/W.
- 2011-06-25
著者
-
Gan Kwang-jow
Department Of Electrical Engineering National Chiayi University
-
Li Bing-Jing
Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan
-
Gan Kwang-Jow
Department of Electrical Engineering, National Chiayi University, Chiayi 600, Taiwan, R.O.C.
-
Li Bing-Jing
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
-
Chang Chih-Hsiang
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
-
Su Yun-Kuin
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
関連論文
- Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
- Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
- Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
- Characterization of Extrinsic Hysteresis Phenomena of Series-Connected Identical Esaki-Diode-Like Negative Differential Resistance Devices
- Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources
- Sintering Behavior and Dielectric Properties of ZnNb2O6–TiO2 Ceramic System at Microwave Frequency
- Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites
- Investigation of the Combined Current–Voltage Characteristics of Two Similar Esaki-Diode-Like Devices
- Trivalued Memory Circuit Using Metal–Oxide–Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
- Hysteresis Phenomena for the Series Circuit of Two Identical Negative Differential Resistance Devices