Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

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概要

• 論文の詳細を見る

• The paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices. Specifically, this three-peak NDR circuit is biased by two switch-controlled current sources. Compared to the traditional MVL circuit made of resonant tunneling diode (RTD), this multiple-peak MOS-HBT-NDR circuit has two major advantages. One is that the fabrication of this circuit can be fully implemented by the standard BiCMOS process without the need for molecular-beam epitaxy system. Another is that we can obtain more logic states than the RTD-based MVL design. In measuring, we can obtain eight logic states at the output according to a sequent control of two current sources on and off in order.

• （社）電子情報通信学会の論文
• 2010-08-01

著者

• Gan Kwang-jow

  Department Of Electrical Engineering National Chiayi University

• Chen Yan-wun

  Department Of Electronic Engineering Kun Shan University

• LIANG Dong-Shong

  Department of Electrical Engineering, National Cheng Kung University

関連論文

• Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
• Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
• Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
• Characterization of Extrinsic Hysteresis Phenomena of Series-Connected Identical Esaki-Diode-Like Negative Differential Resistance Devices
• Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources
• Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites
• Investigation of the Combined Current–Voltage Characteristics of Two Similar Esaki-Diode-Like Devices
• Trivalued Memory Circuit Using Metal–Oxide–Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
• Hysteresis Phenomena for the Series Circuit of Two Identical Negative Differential Resistance Devices

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