Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit

スポンサーリンク

概要

• 論文の詳細を見る

• A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35μm SiGe BiCMOS process.

• （社）電子情報通信学会の論文
• 2010-04-01

著者

• GAN Kwang-Jow

  Department of Electrical Engineering, National Cheng Kung University

• Gan Kwang-jow

  Department Of Electrical Engineering National Chiayi University

• LIANG Dong-Shong

  Department of Electrical Engineering, National Cheng Kung University

• Liang Dong-shong

  Department Of Electronic Engineering Kun Shan University

関連論文

• Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
• Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
• Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
• Characterization of Extrinsic Hysteresis Phenomena of Series-Connected Identical Esaki-Diode-Like Negative Differential Resistance Devices
• Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources
• Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites
• Investigation of the Combined Current–Voltage Characteristics of Two Similar Esaki-Diode-Like Devices
• Trivalued Memory Circuit Using Metal–Oxide–Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
• Hysteresis Phenomena for the Series Circuit of Two Identical Negative Differential Resistance Devices

スポンサーリンク