Hysteresis Phenomena for the Series Circuit of Two Identical Negative Differential Resistance Devices
スポンサーリンク
概要
- 論文の詳細を見る
The hysteresis phenomena and current–voltage ($I$–$V$) characteristics of a series combination of two identical negative differential resistance (NDR) devices are analyzed. In this study, two different cases are discussed. The analysis shows that hysteresis phenomena in the combined $I$–$V$ characteristics depend upon the electrical parameters of the series-connected NDR devices. The relationships between the hysteresis voltage and electrical parameters are studied. The effect of series resisitance on the combined $I$–$V$ curve is investigated. Experimental results are demonstrated to support the analysis and discussion.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
-
Gan Kwang-jow
Department Of Electrical Engineering National Chiayi University
-
Gan Kwang-Jow
Department of Electronic Engineering, Kun Shan University of Technology, Tainan Hsien, Taiwan, R.O.C.
関連論文
- Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
- Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
- Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
- Characterization of Extrinsic Hysteresis Phenomena of Series-Connected Identical Esaki-Diode-Like Negative Differential Resistance Devices
- Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources
- Thermal Dissipation of High-Brightness Light Emitting Diode by Using Multiwalled Carbon Nanotube/SiC Composites
- Investigation of the Combined Current–Voltage Characteristics of Two Similar Esaki-Diode-Like Devices
- Trivalued Memory Circuit Using Metal–Oxide–Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
- Hysteresis Phenomena for the Series Circuit of Two Identical Negative Differential Resistance Devices