A 2.4 GHz GaAs HBT stacked power amplifier with inductance compensation
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概要
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A stacked power amplifier (PA) using 2-µm GaAs HBT process is presented for 2.4 GHz application. The stacked configuration can increase the output power by raising the supply voltage of the circuit. Additionally, a novel inter-stage matching technique with series RC is proposed to suppress the efficiency degradation caused by the parasitic capacitance. The measurement results show the compensation technique improves PAE by more than 6 %, while the error vector magnitude (EVM) is enhanced. And the fabricated PA shows a gain of 23.7 dB and a saturated output power of 32 dBm with PAE of 50 %, while the EVMs are lower than 3 % up to 26 dBm of OFDM/64QAM output power.
著者
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Wu Jianhui
National ASIC Center, Southeast University
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Sun Xiaohong
National ASIC System Engineering Research Center, Southeast University
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Chen Tao
National ASIC System Engineering Research Center, Southeast University
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Niu Xu
RF Power Device and Circuit Engineering Research Center
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Gao Huai
RF Power Device and Circuit Engineering Research Center
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