A study of dielectric solvent effect on silicon-29 NMR chemical shifts of some chlorosilanes.
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概要
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The dielectric solvent effect on the <SUP>29</SUP>Si NMR chemical shifts of some chlorosilanes is calculated by means of the finite perturbation theory within the CNDO/2 framework using the solvaton theory which is employed to estimate specific solute-solvent bonded interactions as a function of the dielectric constant of the medium. The calculated variations are reasonably compared with the gross trend of the observed solvent effects of <SUP>29</SUP>Si chemical shifts. Further, the origin of the dielectric solvent effect is discussed.
- 公益社団法人 日本化学会の論文
著者
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Takayama Toshio
Department Of Applied Chemistry Faclty Of Engineering Kanagawa University
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Asakura Tetsuo
Department Of Biochemistry And Life Sciences Faculty Of Technology Tokyo University Of Agriculture A
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Ando Isao
Department Of Chemistry And Materials Science Tokyo Institute Of Technology
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