Chemical vapor growth of titanium diboride whisker.
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概要
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Titanium diboride whisker was grown by chemical vapor deposition from a gaseous mixture of TiCl<SUB>4</SUB>, BCl<SUB>3</SUB>, H<SUB>2</SUB>, and Ar. The relations between the growth conditions and the crystal morphologies were investigated. The predominant factors for whisker growth were found to be the substrate temperature and the kind of impurities painted on the substrate. The optimum temperature was determined as 1050–1070 °C where whiskers grew up to 250 μm in length and 0.1 to 1 μm in diameter for 30 min. Au, Pt, and Pd were found to be promissing impurities for whisker growth. From an observation of the droplet on whisker tip, the growth mechanism for the whiskers was supposed to be VLS mechanism. The form of whisker grown was tetragonal and hexagonal pillar, and the growth direction was determined as [100]direction.
- 公益社団法人 日本化学会の論文
著者
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Motojima Seiji
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Takahashi Yasutaka
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Sugimori Fumio
Department of Synthetic Chemistry, Faculty of Engineering, Gifu University
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Sugiyama Kohzo
Department of Applied Chemistry, Faculty of Engineering, Nagoya University
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