Chemical vapor deposition of titanium disulfide.
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概要
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Chemical vapor deposition of TiS<SUB>2</SUB> was examined. TiS<SUB>2</SUB> was deposited on a quartz substrate above 300 °C from a gas mixture of TiCl<SUB>4</SUB>, H<SUB>2</SUB>S, and Ar. Maximum deposition rate was attained at 700–800 °C for a 0.7 gas flow ratio H<SUB>2</SUB>S/(TiCl<SUB>4</SUB>+H<SUB>2</SUB>S) irrespective of temperature. Crystal morphology and composition were strongly affected by temperature and gas compositions. Well-formed TiS<SUB>2</SUB> crystals were grown either at 600 °C or from a gas mixture of low flow ratio 0.2 of H<SUB>2</SUB>S/(TiCl<SUB>4</SUB>+H<SUB>2</SUB>S). Single phase of TiS<SUB>2</SUB> was deposited in the temperature range 400–850 °C.
- 公益社団法人 日本化学会の論文
著者
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Motojima Seiji
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Takahashi Yasutaka
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Sugiyama Kohzo
Department of Applied Chemistry, Faculty of Engineering, Nagoya University
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Motojima Seiji
Department of Synthetic Chemistry, Faculty of Engineering, Gifu University
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Itoh Kazuaki
Department of Synthetic Chemistry, Faculty of Engineering, Gifu University
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