Impurity metal-activated crystal growth of niobium monophosphide from gas phase.
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概要
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Niobium monophosphide single crystals were obtained by chemical vapor deposition from a gas mixture of NbCl<SUB>5</SUB>, PCl<SUB>3</SUB>, H<SUB>2</SUB>, and Ar on a quartz substrate using metallic impurity. The existence of Au, Pt, Pd, and Ni resulted in the growth of whiskers or pillar crystals. Maximum whisker length of 5 mm and thickness of 30 μm were obtained at 1150 °C for an hour with the use of Pt impurity. Platelet crystals (400×1000×20 μm, max.) were obtained with the use of Pt at 1240 °C. The growth directions of the whiskers and some platelet crystals were assigned to 〈001〉 and a direction in (001) plane, respectively. The optimum growth conditions for the pillar crystals in the case of Ni impurity: substrate temperature 1000–1020 °C, gas flow ratio PCl<SUB>3</SUB>/(NbCl<SUB>5</SUB>+PCl<SUB>3</SUB>) of 0.7–0.75. From observation of the tip and base of pillar crystals grown with Ni, the growth mechanism seems to be base VLS followed by VS.
- 公益社団法人 日本化学会の論文
著者
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Motojima Seiji
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Takahashi Yasutaka
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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Sugiyama Kohzo
Department of Applied Chemistry, Faculty of Engineering, Nagoya University
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Izushi Toyohiko
Government Industrial Research Institute of Nagoya
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