TiNイオンプレーティング皮膜の配向性におよぼす基板の影響

概要

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TiN films were prepared on SK 5 and glass substrates by RF ion plating at various values of nitrogen pressure, bias voltage and RF power. The effects of these process parameters on the X-ray intensity and composition data of the films were studied using X-ray diffraction and X-ray photoelection spectroscopy (XPS).At higher nitrogen pressure, the TiN film surface was predominantly parallel to (200) for steel substrates and to (111) for glass. At lower bias voltage and lower RF power, the (111) orientation was strongly preferred for both substrates, while at higher bias voltage and higher RF power, the film surface was predominantly parallel to (200) for steel substrates and (111) for glass. It was found that these changes in film orientation can be explained by a gas adsorptive inhibition model, even for insulating substrates.
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