アークイオンプレーティング (AIP) 法によるTi-Zr系合金の炭化物及び窒化物の薄膜作製

概要

論文の詳細を見る
Thin films of (Ti-Zr) nitride and (Ti-Zr) carbide were prepared on WC-Co substrates by the arc ion plating (AIP) process. The Ti-Zr composition of the film was similar to that of the targets used.Deviations in Ti-Zr composition in the AIP process were found to be very small, even in nitriding and carbiding reactions. Thus This process is suitable for the formation of thin films of alloys or ceramics composed of metals with greatly differing vapour pressures.The maximum hardnesses were Hv: 3300 for (Ti-50at%Zr)N and Hv: 4000 for (Ti-50at%Zr) C. The crystal structures and orientations of the thin films having maximum microhardnesses were characterized by X-ray diffraction (CuKα, 35kV-30mA). (Ti-Zr) nitride was found to have a (111) preferred orientation, while (Ti-Zr) carbide had (111) and (200) preferred orientations.
社団法人表面技術協会の論文