Ar+イオン衝撃したSi (111) 表面上での蒸着Ag原子の挙動

概要

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By means of LEED and AES, we have studied the behavior of 1 ML-Ag atoms deposited on Si (111) surfaces with Ar+ pre-bombardments. On the surfaces with Ar+ pre-bombardments (1 KeV, 0.2-1.5×1015 ions/cm2), we observed the drastic decrease of Ag (MVV) Auger intensity with increasing annealing temperature. The intensity minimum was seen at about 350°C. Further increase of the annealing temperature led to the recovery of the Ag Auger intensity. From LEED observations the above intensity behavior was concluded to be mainly due to the internal diffusion of Ag atoms along the defects induced by Ar+ ion bombardments. The effects of the defect on the Si (111) surface cleaned by Ar+ ion bombardment and annealing, and on the atomic arrangements in the √3 × √3 Ag structure were discussed based on our results. Moreover, the 1 ML-Ag deposition and annealing was suggested to be an useful method to survey the low energy Ar+ion induced defects in Si (111) sub-surface (10Å).
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