外部誘導型高周波放電方式の直流スパッタ法によるCo薄膜の微細構造と磁気特性

概要

論文の詳細を見る
A new type of dc sputtering apparatus, in which both a radio frequency and a magnetic field are supplied from the outside in order to enhance a sputtering efficiency, was produced and applied to prepare cobalt thin films. In the present apparatus, the sputtering parameters such as applied voltage, target-substrate distance and target current can be controlled independently to get a stable glow discharge at a low gas pressure of 10<SUP>-3</SUP> Torr. The sputtering experiments were mainly done with an applied voltage of 900 V under various Argon gas pressures from 1 to 30 mTorr and also in an Argon gas including oxygen gas of about 0.6% in pressure. The microstructure of the deposited films was examined by X-ray and electron diffraction techniques including electron microscopy. A preliminary study of the magnetic features was also done by measuring the magnetization curves.
日本真空協会の論文