Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions
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概要
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Thermal hysteresises of electrical resistance, accompanying with a structural phase transition, in epitaxial VO2 films have been successfully reduced to 1°C or less by doping Ti or Nb ions. We considered that owing to the metal-ion-substitutive structural defects induced by doping metal ions into VO2 films, the structural phase transition easily occurred without superheating or supercooling. In Nb-doped VO2 films, the hysteresis disappeared at a lower doping level than Ti-doped VO2 films. The maximum values of the temperature coefficient of the resistance of V0.91Ti0.09O2 and V0.982Nb0.018O2 films, which exhibited non-hysteretic MI transitions, were −24.8%/°C at 46°C and −21.6%/°C at 19°C, respectively.
- 公益社団法人 日本セラミックス協会の論文
著者
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KUMAGAI Toshiya
National Institute of Advanced Industrial Science and Technology
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NAKAJIMA Tomohiko
National Institute of Advanced Industrial Science and Technology
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TSUCHIYA Tetsuo
National Institute of Advanced Industrial Science and Technology
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Kumagai T
Advanced Manufacturing Research Institute National Institute Of Advanced Industrial Science And Tech
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Nakajima Tomohiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Tsuchiya Tetsuo
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Kumagai Toshiya
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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NISHIKAWA Masami
School of Environment and Information Sciences, Yokohama National University
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OKUTANI Takeshi
School of Environment and Information Sciences, Yokohama National University
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Kumagai Toshiya
National Chemical Laboratory for Industry
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