Low-Temperature Wafer Bonding for MEMS Hermetic Packaging Using Sub-micron Au Particles
スポンサーリンク
概要
- 論文の詳細を見る
A study of wafer-level hermetic bonding using sub-micron gold particles with a mean diameter of 0.3 μm was conducted at bonding temperatures of 150–200°C with varying bonding pressures in the range of 50–100 MPa. 4.5 mm-square, 10 μm–100 μm-wide sealing line patterns of sub-micron Au particles were formed on glass wafers by means of wafer-level processing using photolithography and a slurry-filling technique. The tensile bond strength was measured with a stud-pull method using 5 mm × 5 mm chips and exhibited as > 20 MPa. A preliminary hermeticity test was performed by immersing the bonded wafer pairs into a low-viscosity liquid and it was confirmed that the sealing lines with widths as thin as 20 μm showed a good sealing property against the liquid. The result demonstrated the feasibility of this low-temperature wafer bonding process using sub-micron Au particles, which could achieve hermetic sealing with absorbing a micron-level surface roughness and/or topography.
著者
-
Mizuno Jun
Nanotechnology Research Laboratory, Waseda University
-
Mizuno Jun
Nanotechnology Res. Lab. Waseda Univ.
-
Ogashiwa Toshinori
Tanaka Denshi Kogyo Ltd.
-
Nishimori Takashi
Tanaka Kikinzoku Kogyo K.K.
-
Ikoma Tatsuya
SUSS MicroTec K.K.
-
Ishida Hiroyuki
SUSS MicroTec K.K.
-
Yazaki Takuya
SUSS MicroTec K.K.
-
Kusamori Hiroyuki
Tanaka Kikinzoku Kogyo K.K.
関連論文
- Au-electrode-embedded cyclo-olefin polymer microchip using low-temperature direct bonding (特集 マイクロ加工および支援技術)
- Au-Electrode-Embedded Cyclo-Olefin Polymer Microchip Using Low-Temperature Direct Bonding
- Low-temperature Direct Bonding of Poly(methyl methacrylate) for Polymer Microchips
- Simplified 20-μm Pitch Vertical Interconnection Process for 3D Chip Stacking
- Fabrication of Metallic Nanopatterns Using the Vacuum Type UV-NIL Equipment
- Direct Solder Bump Formation Technique on Al Pad and Its High Reliability
- Fabrication of High Light-Extraction Efficiency LED Using Nanostructures by UV Nanoimprint Lithography and Electrodeposition
- Single Grain and Single Grain Boundary Resistance of Pentacene Thin Film Characterized by Nano-scale Electrode Array
- Fabrication of High-Intensity Light-Emitting Diodes Using Nanostructures by Ultraviolet Nanoimprint Lithography and Electrodeposition
- Flip-Chip Bonding Using Superconducting Solder Bump
- New Flip-Chip Bonding Technology for Supercondueting IC
- Low-Temperature Wafer Bonding for MEMS Hermetic Packaging Using Sub-micron Au Particles
- Single Grain and Single Grain Boundary Resistance of Pentacene Thin Film Characterized Using a Nanoscale Electrode Array
- Superconductive Wire Bonding with High Reliability at 4.2 K