Fabrication of High-Intensity Light-Emitting Diodes Using Nanostructures by Ultraviolet Nanoimprint Lithography and Electrodeposition
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概要
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Antireflection nanostructures for GaN light-emitting diodes (LEDs) were fabricated by reactive ion etching (RIE) using Ni as an etching mask. The Ni mask was formed by electrodeposition in combination with ultraviolet nanoimprint lithography (UV-NIL). The antireflection nanostructures of 600 nm in depth, 300 nm in diameter, and 500 nm in pitch were fabricated on a GaN substrate. The radiant intensity of the LEDs was increased 1.5 times compared to that of a conventional LED. Since this method enables the fabrication of wafer-level GaN nanostructures with a low cost process, it is applicable to the fabrication of photonic crystals.
- 2008-02-25
著者
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Mizuno Jun
Nanotechnology Res. Lab. Waseda Univ.
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Ono Yoshinobu
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd
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Shoji Shuichi
Major in Nano-science and Nano-engineering, School of Science and Technology, Waseda University, Tokyo 169-8555, Japan
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Ono Hiroshi
Major in Nano-science and Nano-engineering, School of Science and Technology, Waseda University, Tokyo 169-8555, Japan
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Kasahara Kenji
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Mizuno Jun
Nanotechnology Research Laboratory, Waseda University, Tokyo 162-0041, Japan
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Ono Yoshinobu
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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