Electric-field-induced giant strain in Bi_<0.5>Na_<0.5>TiO_3-based single crystals : Influence of high-oxygen-pressure annealing
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概要
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Influences of high-oxygen-pressure (350MPa) annealing on the properties of leakage current, polarization, and strain were investigated for single crystals of (Bi_<0.5>Na_<0.5>)TiO_3-(Bi_<0.5>K_<0.5>)TiO_3-BaTiO_3 with P4mm tetragonal structure The oxygen annealing led to a marked increase in leakage current, showing that the oxidized crystals have a high concentration of electron hole (carrier) and a low concentration of oxygen vacancy compared with the crystals annealed in air. While the air-annealed crystals exhibited a giant strain up to 0.8% at an electric field of 40kV/cm, the oxidized crystals showed a small strain less than 0.3%. The results can be explained by the interaction between ferroelectric domains and charged defects.
- 2009-01-01
著者
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Noguchi Yuji
Res. Center For Advanced Sci. And Technol. The Univ. Of Tokyo
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NOGUCHI Yuji
Research Center for Advanced Science and Technology, University of Tokyo
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Miyayama Masaru
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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TERANISHI Shunsuke
Research Center for Advanced Science and Technology, The University of Tokyo
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SUZUKI Muneyasu
Research Center for Advanced Science and Technology, The University of Tokyo
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Noguchi Yuji
Research Center For Advanced Science And Technology The University Of Tokyo
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Teranishi Shunsuke
Research Center For Advanced Science And Technology The University Of Tokyo
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Teranishi Shunsuke
Research Ceater For Advanced Science And Technology The University Of Tokyo
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Noguchi Yuji
Research Center for Advanced Science and Technology, The University of Tokyo
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MIYAYAMA Masaru
Research Center for Advanced Science and Technology, The University of Tokyo
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