Time-Dependent DMRG Study on Quantum Dot under a Finite Bias Voltage(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
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概要
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Resonant tunneling through quantum dot under a finite bias voltage at zero temperature is investigated by using the adaptive time-dependent density matrix renormalization group (TdDMRG) method. Quantum dot is modeled by the Anderson Hamiltonian with the one-dimensional nearest-neighbor tightbinding leads. Initially the ground state wave function is calculated with the usual DMRG method. Then the time evolution of the wave function due to the slowly changing bias voltage between the two leads is calculated by using the TdDMRG technique. Even though the system size is finite, the expectation values of current operator show steady-like behavior for a finite time interval, in which the system is expected to resemble the real nonequilibrium steady state of the infinitely long system. We show that from the time intervals one can obtain quantitatively correct results for differential conductance in a wide range of bias voltage. Finally we observe an anomalous behavior in the expectation value of the double occupation operator at the dot 〈n_↑n_↓〉 as a function of bias voltage.
- 社団法人日本物理学会の論文
- 2008-08-15
著者
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ZHAO Jize
Institute for Solid State Physics, University of Tokyo
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UEDA Kazuo
Institute for Solid State Physics, University of Tokyo
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Zhao Jize
Institute For Solid State Physics University Of Tokyo
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Fujii Tatsuya
Institute For Solid State Physics University Of Tokyo
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KIRINO Shunsuke
Institute for Solid State Physics, University of Tokyo
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Kirino Shunsuke
Institute For Solid State Physics University Of Tokyo
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Ueda Kazuo
Institiute For Solid State Physics University Of Tokyo
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