モリブデンダイシリサイドを含む反応焼結炭化ケイ素の微細組織

概要

論文の詳細を見る
Residual silicon in the reaction-bonded silicon carbide (RBSiC) can be replaced by refractory MoSi_2 by using Si-Mo alloy as infiltrants instead of pure Si. Transmission electron microscopy of these materials clarified the following results. The MoSi_2 existed in the SiC grain boundaries and many fine grains of SiC were found in the MoSi_2 phase. The carbon particles were thought to be dissolved into the Si melt including Mo and reprecipitated as SiC particles in the solution-reprecipitation mechanism. The Mo concentration in the Si-Mo melt increased with the reprecipitation of SiC particles, and the MoSi_2 was precipitated in the grain boundaries. The presence of the fine SiC particles in the MoSi_2 phase suggests that the carbon have a fairly strong interaction with silicon in the melt and diffuse not as isolated atoms, but as C-Si pairs.
社団法人日本セラミックス協会の論文
2007-08-01