01aD05 H-Si(111)表面上でのペンタセン薄膜結晶の低速電子顕微鏡観察II : ドメイン構造の生成機構(バイオ・有機(1),第36回結晶成長国内会議)

概要

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Dendritic growth of pentacene (Pn) thin film crystals on a H-Si(111) surface was observed in situ by low-energy electron microscopy. We found that each dendrite branch is always composed of three domains with different orientations of 2D unit cells (Fig. 1(a)), and the center domain whose b axes of the 2D unit cell is parallel to the growth direction of the dendrite branch grows faster than outer two domains. This result indicates the direction of the b axis of the Pn 2D unit cell is a preferential growth direction. In addition, since the b axes of the outer two domains are rotated ±60 deg in relation to that of the center domain (Fig. 1(a)), the outer directions of the branch are the preferential growth directions of the outer domains. Hence, when a child branch appears, the outer domain of the mother branch becomes a center domain of the child branch.
日本結晶成長学会の論文
2006-11-01