サファイアの構造性複屈折を利用した半導体直線偏光レーザの消光比向上の方法

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This paper reports on a study in which the method of extinction ratio improvement of plane polarized laser which passes the synthetic sapphire which is brazed to a laser device package. The sapphire is used as a semiconductor laser window. Stresses which develop variant azimuths of stress birefringence are applied to the sapphire when the sapphire is brazed to a laser package. As a result, the extinction ratio of plane polarized laser which passes the sapphire is decreased. Variant azimuths of stress birefringence in a brazed synthetic sapphire are narrowed by the increased form birefringence which is induced by tilting the sapphire. Narrowing down the variation of azimuths improve the extinction ratio of plane polarized laser which passes the sapphire. The total azimuth of the birefringence which is the superposition of the stress birefringence and the form birefringence is measured using our scanning optical retardation mapping system. As a result, it has been demonstrated that variance of azimuths of birefringence in the sapphires is narrowed to one hundredth. The extinction ratio of plane polarized laser will increase when the azimuths of birefringence in sapphire coincide with the azimuth of the plane polarizued laser. The narrowing the variance of azimuths of stress birefringence in sapphire allows semiconductor lasers to increase data transmission efficiency.
2006-05-25