807 GaAs ウエハの残留応力と結晶すべりの関係

概要

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We have developed equipment to measure optical birefringences in commercial LEC-grown GaAs (100) wafers by using a photoelastic modulator and a polarized laser. A He-Ne infrared laser was utilized as the light source for measurements of strain-induced birefringence in the GaAs wafers. The residual strain and stress components were calculated from the values obtained experimentally. The residual stress profiles have been evaluated to explain the correlation between the residual stress and thermal-stress-induced dislocation. It was found that the optical birefringence equipment developed for this study possessed the needed sensitivity to evaluate residual stress profiles of commercial GaAs (100) wafers. We have discovered the relation between the crystal gliding (translation gliding) and the process-induced stressesat 700℃ on GaAs (100) wafers.
2000-07-31