913 偏光ラマンスペクトル分析による Si 結晶の応力評価法

概要

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The Raman spectrum of silicon that is applied uniaxial stress in several directions are observed by micro-Raman spectroscopy in order to obtain the relation between the Raman shift and the local stress present. In this paper, the influence of stress-strain state on the Raman shift for {110} surface of silicon single crystal. From polarization selection rules, we can selectively observe eigenvalues of optical phonons in {110} face of silicon and determine the effect of the stress on optical phonons theoretically. However, the Raman shift depends on both stress-strain state and polarization configuration for {110} face. In our measurements, the uniaxial stress was applied to the samples which were oriented three different directions. The experimental results are good agreement with the theoretical estimations.
一般社団法人日本機械学会の論文
2000-07-31