GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over mm-Sized Tungsten Wires
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Seifert W
Lund Univ. Lund Swe
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Wernersson L‐e
Solid State Physics/nanometer Structure Consortium Lund University
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WERNERSSON Lars-Erik
Department of Solid State Physics, University of Lund
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SEIFERT Werner
Department of Solid State Physics, University of Lund
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LITWIN Andrej
Department of Solid State Physics, University of Lund
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GEORGSSON Kristina
"Nanometer Structure" Consortium, Lund University
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SAMUELSON Lars
"Nanometer Structure" Consortium, Lund University
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Seifert Werner
Department Of Solid State Physics University Of Lund
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Samuelson L
Lund Univ. Lund Swe
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Litwin A
Department Of Solid State Physics University Of Lund
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Samuelson Lars
ルンド大学固体物理学科
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Seifert W
Univ. Lund
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Seifert W
ルンド大学固体物理学科
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Wernersson Lars-erik
Department Of Electrical And Information Technology Lund University
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Georgsson Kristina
Nanometer Structure" Consortium Lund University
関連論文
- InP Hot Electron Transistors with a Buried Metal Gate
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Proposal for a Solid State Biprism Device
- GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over mm-Sized Tungsten Wires
- Nano-Optical Studies of Individual Nanostructures
- 3重障壁共鳴トンネルダイオードを用いたGaAsP/GaAs伝導帯バンド不連続量の評価
- 半導体ヘテロ接合に隣接した埋め込み微細金属による共鳴トンネル電流の制御
- Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots ( Quantum Dot Structures)
- Luminescence from InP/GaInP Quantum Dots Excited by Micro-Photoluminescence or by Local Injection with Scanning-Tunneling Microscope
- High Tuning-Range VCO Using a Gated Tunnel Diode
- Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs : Structure and Mechanical and Thermal Properties of Condensed Matter