Luminescence from InP/GaInP Quantum Dots Excited by Micro-Photoluminescence or by Local Injection with Scanning-Tunneling Microscope
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Samuelson L
Lund Univ. Lund Swe
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Hessman Dan
Nanometer Structure Consortium Box 118 Lund University:department Of Electronics University Of Valla
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Montelius Lars
Department Of Solid State Physics Lund University
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Lindahl Joakim
Department Of Solid State Physics Lund University
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Samuelson Lars
Lund University Solid Physics
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Samuelson Lars
ルンド大学固体物理学科
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CASTRILLO Pedro
Solid State Physics
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PISTOL Mats-Erik
Solid State Physics
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CASTRILLO Pedro
Lund University, Department of Solid State Physics
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HESSMAN Dan
Lund University, Department of Solid State Physics
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LINDAHL Joakim
Lund University, Department of Solid State Physics
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MONTELIUS Lars
Lund University, Department of Solid State Physics
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PISTOL Mats-Erik
Lund University, Department of Solid State Physics
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- GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over mm-Sized Tungsten Wires
- Nano-Optical Studies of Individual Nanostructures
- 半導体ヘテロ接合に隣接した埋め込み微細金属による共鳴トンネル電流の制御
- Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots ( Quantum Dot Structures)
- Luminescence from InP/GaInP Quantum Dots Excited by Micro-Photoluminescence or by Local Injection with Scanning-Tunneling Microscope
- Aerosol Fabrication of Nanocrystals of InP