Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots (<Special Issue> Quantum Dot Structures)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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Samuelson L
Lund Univ. Lund Swe
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Hessman Dan
Nanometer Structure Consortium Box 118 Lund University:department Of Electronics University Of Valla
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Samuelson Lars
ルンド大学固体物理学科
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CASTRILLO Pedro
Solid State Physics
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PISTOL Mats-Erik
Solid State Physics
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PRIETO Jose
Nanometer Structure Consortium, Box 118, Lund University
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PRYOR Craig
Solid State Physics
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SAMUELSON Lars
Nanometer Structure Consortium, Box 118, Lund University
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Prieto Jose
Nanometer Structure Consortium Box 118 Lund University
関連論文
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Proposal for a Solid State Biprism Device
- GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over mm-Sized Tungsten Wires
- Nano-Optical Studies of Individual Nanostructures
- 半導体ヘテロ接合に隣接した埋め込み微細金属による共鳴トンネル電流の制御
- Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots ( Quantum Dot Structures)
- Luminescence from InP/GaInP Quantum Dots Excited by Micro-Photoluminescence or by Local Injection with Scanning-Tunneling Microscope