High Tuning-Range VCO Using a Gated Tunnel Diode
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Lind Erik
Solid State Physics Lund University
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Wernersson Lars-erik
Department Of Electrical And Information Technology Lund University
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ARLELID Mats
Department of Electrical and Information Technology, Lund University
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NILSSON Mikael
Solid State Physics, Lund University
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ASTROMSKAS Gvidas
Solid State Physics, Lund University
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Arlelid Mats
Department Of Electrical And Information Technology Lund University
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Nilsson Mikael
Solid State Physics Lund University
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Astromskas Gvidas
Solid State Physics Lund University
関連論文
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- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over mm-Sized Tungsten Wires
- High Tuning-Range VCO Using a Gated Tunnel Diode
- Optimization of Overgrown Ex-Situ Processed GaAs Interfaces for a Resonant Tunneling PBT
- Nanowire Field-Effect Transistor