Analysis of the Image Formation Mechanism on High Energy Scanning Electron Microscopy
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概要
- 論文の詳細を見る
The image fotmation mechanism of the high-energy scanning electron microscopy is analyzed by a Monte Carlo simulation of electron trajectories in a specimen. It is shown that only secondary electrons which are produced directly by incident primary electrons carry information of the three-dimensional hole structure at the specimen surface. The major contribution to the signal is due to the secondary electrons emitted from the side-wall of the hole. Even if the hole is covered by a 30-nm-thick carbon film, the edge contrast of the hole is appreciable as the primary electron is incident normal to the surface. If there is an aperture in the film covering the hole, secondary electrons from the side-wall of the hole contribute to the signal.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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Kotera Masatoshi
Department Of Electronic Engineering Osaka Institute Of Technology
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Yamaguchi Kiyoshi
Department Of Electronic Engineering Osaka Institute Of Technology
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