Influence of Electron Scattering on Resolution in Low-Dose Electron-Beam Lithography
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概要
- 論文の詳細を見る
The influence of electron scattering phenomena on the line edge roughness (LER) of a resist after development is discussed using an electron trajectory simulation. The energy range calculated is from 1 to 5 keV, the resist thickness ranges from 10 to 80 nm, and the electron dose ranges from 1 to 10 μC/cm2. In the variable threshold energy density model for obtaining a specific line width, the LER variation is obtained for various electron doses. If the dose is as large as 10 μC/cm2, it is found that it is possible to obtain a 30-nm-wide line, and if the PE energy is 2 keV or less, the LER becomes less than 5 nm. In the fixed threshold energy density model, the line width and the LER variation with electron dose are obtained for various resist thickness.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Kotera Masatoshi
Department Of Electronic Engineering Osaka Institute Of Technology
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Kotera Masatoshi
Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1, Omiya, Asahi-ku, Osaka 535-8585, Japan
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Niu Hirohisa
Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1, Omiya, Asahi-ku, Osaka 535-8585, Japan
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