Simulation of Fogging Electrons in Electron Beam Lithography
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概要
- 論文の詳細を見る
A simulation model of fogging electron trajectories in a specimen chamber is developed to quantify their effect in electron beam lithography. The amount of energy deposited by fogging electrons is approximately 6 orders of magnitude lower than that by backscattered electrons. The exposure intensity distribution is expressed using an equation that considers the dependence of power on the radius. Since the radial range of fogging electrons can be several meters, it is shown that the accumulated background energy is comparable to the energy deposited by backscattered electrons if the electron beam exposure area is large.
- 2009-06-25
著者
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Kotera Masatoshi
Department Of Electronic Engineering Osaka Institute Of Technology
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Maekawa Takeshi
Department of Electronics Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585, Japan
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Kotera Masatoshi
Department of Electronics Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585, Japan
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