Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon

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概要

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• An etching study for undoped a-Si:H films and c-Si has been carried out by using Hg-sensitized H radicals in H_2 gas under UV-light irradiation with a low pressure mercury lamp. It has been found that the etch rate of undoped a-Si:H increases with decreasing substrate temperature and H_2 flow rate, as well as with increasing UV-light intensity. Concerning H_2 gas pressure dependence, a maximum etch rate was observed at around 0.1 Torr. An adsorbed layer, composed of H_2 molecules, H radicals, Hg atoms and photoexcited Hg atoms, can be considered to be formed on the surface. The adsorbed layer irradiated with UV light may supply a sufficient number of H radicals near the surface to rapidly cut off the Si network, leading to the formation of volatile SiH_x.

• 社団法人応用物理学会の論文
• 1989-10-20

著者

• ITO Hiroshi

  Research Institute for Food Science, Kyoto University

• Sakuma Naoshi

  Research And Development Center Toshiba Corporation

• NOZAKI Hidetoshi

  Research & Development Center, Toshiba Corporation

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• Current-Voltage Characteristics of a-Si:H Film Photodiodes Prepared by Mercury-Sensitized Photochemical Vapor Deposition
• Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemieal Vapor Deposition
• Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H_2 Plasma Treatment for i/p Interface
• Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon
• Characteristics for a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition
• Correlation between Si-H_2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition : Condensed Matter

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