Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H_2 Plasma Treatment for i/p Interface

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概要

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• Hydrogenated amorphous silicon (a-Si:H) n-i-p diodes in which the intrinsic (i-type) layer surfaces were exposed to an H_2 plasma before depositing the p-type layer (H_2 plasma treatment of the i/p interface) were prepared. The effects of this H_2 plasma treatment of the i/p interface were observed by dark I-V, photo-I-V under 450 nm illumination, and quasistatic C-V measurements. It has been found that the defect density at the i/p interface is reduced by this treatment. It has also been determined that the performance of a-Si:H diodes is improved by this treatment of the interface.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Ihara Hisanori

  Research And Development Center Toshiba Corporation

• NOZAKI Hidetoshi

  Research & Development Center, Toshiba Corporation

• Nozaki Hidetoshi

  Research And Development Center Toshiba Corporation

関連論文

• Current-Voltage Characteristics of a-Si:H Film Photodiodes Prepared by Mercury-Sensitized Photochemical Vapor Deposition
• Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H_2 Plasma Treatment for i/p Interface
• Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon
• Characteristics for a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition

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