Correlation between Si-H_2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition : Condensed Matter
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概要
- 論文の詳細を見る
The correlation between Si-H_2 bond density and electron drift mobility in a-Si:H films has been investigated by using the dependence of the film properties on the silane gas pressure in mercury-sensitized photochemical vapor deposition. It was found that the electron drift mobility decreased with increasing the Si-H_2 bond density, when the hydrogen contents were about the same amount.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
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ITO Hiroshi
Research Institute for Food Science, Kyoto University
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Sakuma Naoshi
Research And Development Center Toshiba Corporation
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Kamimura Takaaki
Research And Development Center Toshiba Corporation
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NOZAKI Hidetodhi
Research and Development Center, Toshiba Corporation
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Nozaki Hidetodhi
Research And Development Center Toshiba Corporation
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ITO Hiroshi
Research and Development Center, Toshiba Corp.
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