Characteristics for a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition

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概要

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• The density of states in a-Si:H, prepared by mercury-sensitized photo-CVD, was measured by the space-charge-limited current method. The density of Si dangling bonds (N_s) was measured by the electron spin resonance method. N_s and a minimum of the density-of-state near the Fermi level (N_<min>) indicated the same tendency versus substrate temperature, which showed a good correlation between N_s and N_<min>. Both N_s and N_<min> showed a minimtum value near substrate temperature of 200℃. Photosensitivity reached more than 1×10^6 for the sample.

• 社団法人応用物理学会の論文
• 1987-10-20

著者

• KAMIMURA Takaaki

  Research and Development Center, Toshiba Corporation

• NOZAKI Hidetoshi

  Research & Development Center, Toshiba Corporation

• Kamimura Takaaki

  Research And Development Center Toshiba Corporation

関連論文

• The Selective Deposition of a Silicon Film on Hydrogenated Amorphous Silicon by Mercury Sensitized Photochemical Vapor Deposition
• Selective Deposition of Silicon by Mercury Sensitized Photochermical Vapor Deposition
• Current-Voltage Characteristics of a-Si:H Film Photodiodes Prepared by Mercury-Sensitized Photochemical Vapor Deposition
• Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemieal Vapor Deposition
• Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H_2 Plasma Treatment for i/p Interface
• Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon
• Characteristics for a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition
• Effect of Hydrogen Dilution of Silane in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition
• Correlation between Si-H_2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition : Condensed Matter

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